High-frequency admittance of n-v-n space-charge-limited current (SCLC) solid-state devices

A calculation has been made of the HF admittance of n-v-n SCLC devices by a simple method that takes into account the thermally generated free carriers in the central bulk region. The assumption made is that the thermal carrier density is relatively small such that the principal dc properties of the SCLC device still prevail. The calculated results indicate that the effect of the thermal free carriers is to reduce the oscillatory nature of the device HF admittance components.