• DocumentCode
    901829
  • Title

    InAsSb light emitting diodes and their applications to infra-red gas sensors

  • Author

    Dobbelaere, Wim ; De Boeck, Jo ; Bruynserede, C. ; Mertens, Robert ; Borghs, G.

  • Author_Institution
    Interuniv. Micro-Electron Center, Leuven, Belgium
  • Volume
    29
  • Issue
    10
  • fYear
    1993
  • fDate
    5/13/1993 12:00:00 AM
  • Firstpage
    890
  • Lastpage
    891
  • Abstract
    InAs1-xSbx light emitting diodes were grown on GaAs and Si substrates by molecular beam epitaxy. The devices emit infra-red light with wavelengths between 3 and 5 mu m and can be used to fabricate infra-red gas sensors.
  • Keywords
    III-V semiconductors; gas sensors; indium antimonide; infrared detectors; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; 3 to 5 micron; CO 2 gas; GaAs substrate; IR sensor; InAsSb-GaAs; InAsSb-Si; LED; Si substrates; infra-red gas sensors; infrared light; light emitting diodes; molecular beam epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930594
  • Filename
    216293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901829