DocumentCode :
901829
Title :
InAsSb light emitting diodes and their applications to infra-red gas sensors
Author :
Dobbelaere, Wim ; De Boeck, Jo ; Bruynserede, C. ; Mertens, Robert ; Borghs, G.
Author_Institution :
Interuniv. Micro-Electron Center, Leuven, Belgium
Volume :
29
Issue :
10
fYear :
1993
fDate :
5/13/1993 12:00:00 AM
Firstpage :
890
Lastpage :
891
Abstract :
InAs1-xSbx light emitting diodes were grown on GaAs and Si substrates by molecular beam epitaxy. The devices emit infra-red light with wavelengths between 3 and 5 mu m and can be used to fabricate infra-red gas sensors.
Keywords :
III-V semiconductors; gas sensors; indium antimonide; infrared detectors; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; 3 to 5 micron; CO 2 gas; GaAs substrate; IR sensor; InAsSb-GaAs; InAsSb-Si; LED; Si substrates; infra-red gas sensors; infrared light; light emitting diodes; molecular beam epitaxy;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930594
Filename :
216293
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=901829
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