Title :
A multi-IMPATT injection-locked oscillator at 35 GHz
Author :
Adlerstein, Michael G. ; Fines, James
Author_Institution :
Raytheon Co., Lexington, MA, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
A 35-GHz solid-state injection-locked oscillator giving 38 W peak power with 30% duty cycle is described. The power source utilizes a total of ten GaAs IMPATT (impact avalanche and transit time) diodes grouped in two stages. The performance of the source as well as the systematic design and measurement procedures used to develop the multidiode cavities used are discussed
Keywords :
IMPATT diodes; microwave oscillators; solid-state microwave circuits; 35 GHz; 38 W; GaAs; duty cycle; multi-IMPATT injection-locked oscillator; multidiode cavities; peak power; systematic design; Diodes; Gallium arsenide; Impedance; Injection-locked oscillators; Iris; Millimeter wave circuits; Millimeter wave measurements; Reflection; Resonance; Solid state circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
