DocumentCode
901902
Title
A multi-IMPATT injection-locked oscillator at 35 GHz
Author
Adlerstein, Michael G. ; Fines, James
Author_Institution
Raytheon Co., Lexington, MA, USA
Volume
37
Issue
3
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
571
Lastpage
579
Abstract
A 35-GHz solid-state injection-locked oscillator giving 38 W peak power with 30% duty cycle is described. The power source utilizes a total of ten GaAs IMPATT (impact avalanche and transit time) diodes grouped in two stages. The performance of the source as well as the systematic design and measurement procedures used to develop the multidiode cavities used are discussed
Keywords
IMPATT diodes; microwave oscillators; solid-state microwave circuits; 35 GHz; 38 W; GaAs; duty cycle; multi-IMPATT injection-locked oscillator; multidiode cavities; peak power; systematic design; Diodes; Gallium arsenide; Impedance; Injection-locked oscillators; Iris; Millimeter wave circuits; Millimeter wave measurements; Reflection; Resonance; Solid state circuits;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.21630
Filename
21630
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