DocumentCode
901904
Title
A simple model for scaled MOS transistors that includes field-dependent mobility
Author
Garverick, Steven L. ; Sodini, Charles G.
Volume
22
Issue
1
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
111
Lastpage
114
Abstract
A simple MOS model that is suitable for hand calculations, but which includes the effect of normal and tangential electric fields on carrier mobility, is described. This device model is derived from semiphysical models for the field dependence of carrier mobility to accurately predict the effect of reduced dimensions. Fitting parameters for n-channel transistors were extracted. The model is used to examine the effect of reduced mobility at high electric fields on logic switching speed and device transconductance.
Keywords
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; Circuits; Degradation; Electron mobility; Lead; Logic devices; MOSFETs; Predictive models; Scattering; Silicon; Transconductance;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1987.1052681
Filename
1052681
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