DocumentCode
901943
Title
Anisotropy of microwave emission from n-type InSb
Author
Kokoschinegg, P. ; Seeger, K.
Volume
56
Issue
12
fYear
1968
Firstpage
2191
Lastpage
2192
Abstract
The microwave emission from InSb was measured at 1 GHz. It was observed that the threshold of the emission and the emission itself are dependent on the orientation of the crystal. The emission saturates at a magnetic field strength between 3.5 and 6 kG and an electric field intensity of more than 150 V/cm. All experiments were carried out at 77°K.
Keywords
Anisotropic magnetoresistance; Circuits; Electron mobility; Frequency; Gallium arsenide; Microwave technology; Power generation; Resonance; Threshold voltage; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6853
Filename
1448783
Link To Document