• DocumentCode
    901950
  • Title

    Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy

  • Author

    Dangla, J. ; Benchimol, J.L. ; Alexandre, F. ; Sik, H. ; Dubon-Chevallier, C.

  • Author_Institution
    France Telecom, CNET, Bagneux, France
  • Volume
    29
  • Issue
    10
  • fYear
    1993
  • fDate
    5/13/1993 12:00:00 AM
  • Firstpage
    903
  • Lastpage
    905
  • Abstract
    GaAs/GaInP heterojunction bipolar transistors grown by chemical beam epitaxy with highly Be-doped base layers have been found to be stable under electrical stress. The devices did not exhibit any DC current gain change when operated at a collector current density of 4*104 A/cm2 and an emitter collector voltage of 3 V for 100 h.
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; reliability; semiconductor growth; stability; 100 hr; 3 V; DC current gain; GaInP-GaAs:Be; chemical beam epitaxy; electrical stress; emitter collector voltage; heterojunction bipolar transistors; highly Be-doped base layers; stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930603
  • Filename
    216304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901950