An 85-116 GHz SIS receiver using inductively shunted edge junctions

Author

Pan, Shing-Kuo ; Kerr, Anthony R. ; Feldman, Marc J. ; Kleinsasser, Alan W. ; Stasiak, James W. ; Sandstrom, Robert L. ; Gallagher, William J.

Author_Institution

Nat. Radio Astron. Obs., Charlottesville, VA, USA

Volume

37

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

580

Lastpage

592

Abstract

A superconductor-insulator-superconductor (SIS) mixer with a broadband integrated tuning structure is described. The mixer is tunable from 85 to 116 GHz and at 114 GHz has a noise temperature ⩽5.6 K double sideband (DSB) and unity DSB conversion gain. The mixer noise temperature is less than or comparable to the photon noise temperature hf/k≈5.5 K. Referred to the mixer input flange, the receiver noise temperature is ⩽9.5 K DSB when operated with an L -band HEMT (high-electron-mobility transistor) IF amplifier. Saturation measurements have been made using CW and broadband noise sources

Keywords

high electron mobility transistors; mixers (circuits); solid-state microwave circuits; superconducting junction devices; tuning; 85 to 116 GHz; HEMT; IF amplifier; L-band; SIS receiver; broadband integrated tuning structure; broadband noise sources; double sideband; inductively shunted edge junctions; mixer; noise temperature; photon noise temperature; superconductor-insulator-superconductor; unity DSB conversion gain; Broadband amplifiers; Flanges; HEMTs; Hafnium; Josephson junctions; MODFETs; Optical receivers; Superconducting device noise; Superconducting devices; Temperature;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.21631

Filename

21631