Title :
An 85-116 GHz SIS receiver using inductively shunted edge junctions
Author :
Pan, Shing-Kuo ; Kerr, Anthony R. ; Feldman, Marc J. ; Kleinsasser, Alan W. ; Stasiak, James W. ; Sandstrom, Robert L. ; Gallagher, William J.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
A superconductor-insulator-superconductor (SIS) mixer with a broadband integrated tuning structure is described. The mixer is tunable from 85 to 116 GHz and at 114 GHz has a noise temperature ⩽5.6 K double sideband (DSB) and unity DSB conversion gain. The mixer noise temperature is less than or comparable to the photon noise temperature hf/k≈5.5 K. Referred to the mixer input flange, the receiver noise temperature is ⩽9.5 K DSB when operated with an L -band HEMT (high-electron-mobility transistor) IF amplifier. Saturation measurements have been made using CW and broadband noise sources
Keywords :
high electron mobility transistors; mixers (circuits); solid-state microwave circuits; superconducting junction devices; tuning; 85 to 116 GHz; HEMT; IF amplifier; L-band; SIS receiver; broadband integrated tuning structure; broadband noise sources; double sideband; inductively shunted edge junctions; mixer; noise temperature; photon noise temperature; superconductor-insulator-superconductor; unity DSB conversion gain; Broadband amplifiers; Flanges; HEMTs; Hafnium; Josephson junctions; MODFETs; Optical receivers; Superconducting device noise; Superconducting devices; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
