Title :
Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser
Author :
Baba, Toshihiko ; Yogo, Y. ; Suzuki, Kenji ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
fDate :
5/13/1993 12:00:00 AM
Abstract :
The first near room temperature continuous wave lasing operation of a 1.3 mu m GaInAsP/InP surface emitting laser has been achieved by employing a buried heterostructure and a novel MgO/Si heatsink mirror. A dramatic reduction of threshold current at room temperature and a circular narrow output beam were demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 1.3 micron; CW lasing operation; GaInAsP-InP; MgO-Si heatsink mirror; buried heterostructure; circular narrow output beam; continuous wave; room temperature; surface emitting laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930609
