DocumentCode
902098
Title
Dry etching of GaAs and InP for optoelectronic devices
Author
Carter, A.J. ; Thomas, B. ; Morgan, D.V. ; Bhardwaj, J.K. ; McQuarrie, A.M. ; Stephens, M.A.
Author_Institution
Sch. of Electr., Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
Volume
136
Issue
1
fYear
1989
Firstpage
2
Lastpage
5
Abstract
The plasma etching of GaAs and InP using CH/sub 4//H/sub 2/ process gas is reported, and their etching characteristics as a function of platen temperature are shown. These results highlight the two different etching mechanisms for GaAs and InP. Etching of GaAs using chlorine plasma chemistry is discussed with emphasis on surface roughness and damage and then compared to the CH/sub 4//H/sub 2/ process chemistry which yields better etch surface characteristics.<>
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor technology; sputter etching; CH/sub 4/-H/sub 2/; GaAs; III-V semiconductors; InP; etch surface characteristics; optoelectronic devices; plasma etching; surface roughness; Gallium compounds; Indium compounds; Semiconductor device fabrication; Sputter etching;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
14488
Link To Document