DocumentCode
902132
Title
A Comparison of Radiation Damage in Transistors from Cobalt-60 Gamma Rays and 2.2 MeV Electrons
Author
Nichols, D.K. ; Price, W.E. ; Gauthier, M.K.
Author_Institution
Jet Propulsion Laboratory California Institute of Technology Pasadena, California
Volume
29
Issue
6
fYear
1982
Firstpage
1970
Lastpage
1974
Abstract
The total ionizing dose response of ten bipolar transistor types has been measured using Co-60 gamma rays and 2.2 MeV electrons from exposure levels of 750, 1500, and 3000 Gy(Si). Gain measurements were made for a range of collector-emitter voltages and collector currents.
Keywords
Bipolar transistors; Charge carrier lifetime; Degradation; Electron beams; Frequency; Gamma rays; Laboratories; Propulsion; Silicon; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1982.4336480
Filename
4336480
Link To Document