Title :
A Comparison of Radiation Damage in Transistors from Cobalt-60 Gamma Rays and 2.2 MeV Electrons
Author :
Nichols, D.K. ; Price, W.E. ; Gauthier, M.K.
Author_Institution :
Jet Propulsion Laboratory California Institute of Technology Pasadena, California
Abstract :
The total ionizing dose response of ten bipolar transistor types has been measured using Co-60 gamma rays and 2.2 MeV electrons from exposure levels of 750, 1500, and 3000 Gy(Si). Gain measurements were made for a range of collector-emitter voltages and collector currents.
Keywords :
Bipolar transistors; Charge carrier lifetime; Degradation; Electron beams; Frequency; Gamma rays; Laboratories; Propulsion; Silicon; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1982.4336480
