Generation of microwave power by use of the magnetoresistance effect in semiconductors

Microwave power at 10 Gc/s has been generated by the multiplication of a direct current and a microwave magnetic field using a biased intermetallic semiconductor magnetoresistive element in a cavity. The microwave output is proportional to the microwave signal and the pulsed direct current and depends on the bias magnetic field. The results show that the d.c. energy is converted to microwave energy by the magnetoresistance effect in a semiconductor.