DocumentCode
902144
Title
New method for extracting collector series resistance of bipolar transistors
Author
Verzellesi, G. ; Turetta, R. ; Cappellin, M. ; Pavan, Paolo ; Chantre, Alain ; Zanoni, Enrico
Author_Institution
Padova Univ., Italy
Volume
29
Issue
10
fYear
1993
fDate
5/13/1993 12:00:00 AM
Firstpage
931
Lastpage
933
Abstract
A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.
Keywords
bipolar transistors; electric resistance; impact ionisation; semiconductor device testing; bipolar transistors; collector series resistance; forward active region; impact-ionisation-induced base current reversal;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930621
Filename
216322
Link To Document