• DocumentCode
    902144
  • Title

    New method for extracting collector series resistance of bipolar transistors

  • Author

    Verzellesi, G. ; Turetta, R. ; Cappellin, M. ; Pavan, Paolo ; Chantre, Alain ; Zanoni, Enrico

  • Author_Institution
    Padova Univ., Italy
  • Volume
    29
  • Issue
    10
  • fYear
    1993
  • fDate
    5/13/1993 12:00:00 AM
  • Firstpage
    931
  • Lastpage
    933
  • Abstract
    A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.
  • Keywords
    bipolar transistors; electric resistance; impact ionisation; semiconductor device testing; bipolar transistors; collector series resistance; forward active region; impact-ionisation-induced base current reversal;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930621
  • Filename
    216322