Performance of a Schottky surface barrier radiation detector based on bulk undoped semi-insulating GaAs at reduced temperature

Author

Zat´ko, B. ; Dubecký, F.

Author_Institution

Dept. of Semicond. Technol. & Diagnostics, Slovak Acad. of Sci., Bratislava, Slovakia

Volume

53

Issue

2

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

625

Lastpage

629

Abstract

This work presents the performance of a radiation detector based on LEC semi-insulating GaAs with Au/Zn Schottky contact at variable temperature. The roles of the shaping time of a linear amplifier and operating voltage were studied. The performance of the radiation detector was calculated from pulse height spectra of 59.5 keV (²⁴¹Am) and 122.1 keV (⁵⁷Co). The optimal reverse bias voltage of the radiation detector, shaping time of the linear amplifier and temperature of detector were investigated. The best charge collection efficiency of 98.2% at 303 K, relative energy resolution in FWHM 19.8% for 59.5 keV and 10.7% for 122.1 keV at 253 K were obtained.

Keywords

Schottky barriers; semiconductor counters; 122.1 keV; 303 K; 59.5 keV; 98.2 percent; ²⁴¹Am; ⁵⁷Co; Au/Zn Schottky contact; LEC semiinsulating GaAs; Schottky surface barrier radiation detector; bulk undoped semiinsulating GaAs; charge collection efficiency; pulse height spectra; reverse bias voltage; Charge carriers; Energy resolution; Gallium arsenide; Pulse amplifiers; Radiation detectors; Schottky barriers; Semiconductor device noise; Silicon radiation detectors; Spectroscopy; Temperature; Radiation detector; Schottky barrier; semi-insulating GaAs;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.870446

Filename

1621375