DocumentCode :
902234
Title :
Direct optical injection locking of monolithically integrated In0.53Ga0.47As/In0.52Al0.48As MODFET oscillators
Author :
Yang, Dong ; Bhattacharya, P.K. ; Brock, T.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Volume :
29
Issue :
11
fYear :
1993
fDate :
5/27/1993 12:00:00 AM
Firstpage :
944
Lastpage :
945
Abstract :
The authors have fabricated monolithically integrated In0.53Ga0.47As/In0.52Al0.48As 0.25 mu m gate modulation-doped field effect transistor (MODFET) oscillators. The results of direct optical subharmonic injection locking of these oscillator circuits at 10.159 and 19.033 GHz are presented.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave oscillators; 0.25 micron; 10.159 GHz; 19.033 GHz; In 0.53Ga 0.47As-In 0.52 Al 0.48As; MODFET oscillators; SHF; direct subharmonic locking; field effect transistor; modulation-doped; monolithically integrated; optical injection locking;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930629
Filename :
216334
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=902234
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