DocumentCode
902313
Title
EMI characterization and simulation with parasitic models for a low-voltage high-current AC motor drive
Author
Lai, Jih-Sheng ; Huang, Xudong ; Chen, Shaotang ; Nehl, Thomas W.
Author_Institution
Virginia Polytech. Inst., State Univ., Blacksburg, VA, USA
Volume
40
Issue
1
fYear
2004
Firstpage
178
Lastpage
185
Abstract
In this paper, a 12-V 1-kW permanent-magnet ac motor drive is tested extensively at a wide frequency range, and the frequency spectra are partitioned for identification of noise sources and their propagation paths. Switching characterization of the power MOSFET and its body diode reverse-recovery characterization are evaluated for circuit modeling. The parasitic components and common mode path are identified and measured with the time-domain reflectometry (TDR) method. The inverter circuit model is then constructed with major parasitic inductance and capacitance in device modules, passive components, leads, and interconnects. To verify the validity of the inverter model, a comparative study is performed with computer simulations and hardware experiments. The fundamental mechanisms by which the electromagnetic interference (EMI) noises are excited and propagated are analyzed, and the significant roles of parasitic elements coupling with device switching dynamics in EMI generation are examined. The results indicate that the identification of parasitic inductance through TDR measurement helps verify the voltage spike during turn-off, or vice versa. The conducted EMI noise caused by parasitic components of bus capacitor, dc bus, and devices is proven to be identifiable with the characterization and simulation techniques used in this paper.
Keywords
AC motor drives; MOSFET; electromagnetic interference; equivalent circuits; machine testing; permanent magnet motors; time-domain reflectometry; 1 kW; 12 V; body diode reverse-recovery characterization; bus capacitor; electromagnetic interference characterization; electromagnetic interference simulation; low-voltage high-current AC motor drive; major parasitic capacitance; major parasitic inductance; metal oxide semiconductor field effect transistor; noise identification; parasitic models; permanent magnet AC motor drive; power MOSFET; time-domain reflectometry method; AC motors; Circuit noise; Circuit testing; Diodes; Electromagnetic interference; Frequency; Inverters; MOSFET circuits; Power MOSFET; Switching circuits;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2003.821795
Filename
1268194
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