Title :
EMI characterization and simulation with parasitic models for a low-voltage high-current AC motor drive
Author :
Lai, Jih-Sheng ; Huang, Xudong ; Chen, Shaotang ; Nehl, Thomas W.
Author_Institution :
Virginia Polytech. Inst., State Univ., Blacksburg, VA, USA
Abstract :
In this paper, a 12-V 1-kW permanent-magnet ac motor drive is tested extensively at a wide frequency range, and the frequency spectra are partitioned for identification of noise sources and their propagation paths. Switching characterization of the power MOSFET and its body diode reverse-recovery characterization are evaluated for circuit modeling. The parasitic components and common mode path are identified and measured with the time-domain reflectometry (TDR) method. The inverter circuit model is then constructed with major parasitic inductance and capacitance in device modules, passive components, leads, and interconnects. To verify the validity of the inverter model, a comparative study is performed with computer simulations and hardware experiments. The fundamental mechanisms by which the electromagnetic interference (EMI) noises are excited and propagated are analyzed, and the significant roles of parasitic elements coupling with device switching dynamics in EMI generation are examined. The results indicate that the identification of parasitic inductance through TDR measurement helps verify the voltage spike during turn-off, or vice versa. The conducted EMI noise caused by parasitic components of bus capacitor, dc bus, and devices is proven to be identifiable with the characterization and simulation techniques used in this paper.
Keywords :
AC motor drives; MOSFET; electromagnetic interference; equivalent circuits; machine testing; permanent magnet motors; time-domain reflectometry; 1 kW; 12 V; body diode reverse-recovery characterization; bus capacitor; electromagnetic interference characterization; electromagnetic interference simulation; low-voltage high-current AC motor drive; major parasitic capacitance; major parasitic inductance; metal oxide semiconductor field effect transistor; noise identification; parasitic models; permanent magnet AC motor drive; power MOSFET; time-domain reflectometry method; AC motors; Circuit noise; Circuit testing; Diodes; Electromagnetic interference; Frequency; Inverters; MOSFET circuits; Power MOSFET; Switching circuits;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2003.821795