• DocumentCode
    902327
  • Title

    Comments on `Stochastic geometry effects in MOS transistors´

  • Author

    Zombory, L.

  • Volume
    22
  • Issue
    2
  • fYear
    1987
  • fDate
    4/1/1987 12:00:00 AM
  • Firstpage
    303
  • Lastpage
    305
  • Abstract
    For the original article see ibid., vol.SC-20, no.4, p.865-70, 1985. A paper by G. De Mey, gives the formulation for the variance of the drain current for rectangular-gate MOS transistors due to edge and oxide thickness variation. The author extends the results to nonrectangular geometries.
  • Keywords
    Insulated gate field effect transistors; Stochastic processes; insulated gate field effect transistors; stochastic processes; Circuit simulation; Computer displays; Electrons; Geometry; Graphical models; Harmonic analysis; MOSFETs; SPICE; Stochastic processes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1987.1052720
  • Filename
    1052720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902327