Title :
Comments on `Stochastic geometry effects in MOS transistors´
fDate :
4/1/1987 12:00:00 AM
Abstract :
For the original article see ibid., vol.SC-20, no.4, p.865-70, 1985. A paper by G. De Mey, gives the formulation for the variance of the drain current for rectangular-gate MOS transistors due to edge and oxide thickness variation. The author extends the results to nonrectangular geometries.
Keywords :
Insulated gate field effect transistors; Stochastic processes; insulated gate field effect transistors; stochastic processes; Circuit simulation; Computer displays; Electrons; Geometry; Graphical models; Harmonic analysis; MOSFETs; SPICE; Stochastic processes; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052720
