High C-doped base InGaP/GaAs HBTs with improved characteristics grown by MOCVD

Author

Kren, D.E. ; Rezazadeh, A.A. ; Rees, P.K. ; Tothill, J.N.

Author_Institution

Kings Coll., London Univ., UK

Volume

29

Issue

11

fYear

1993

fDate

5/27/1993 12:00:00 AM

Firstpage

961

Lastpage

963

Abstract

The improvement in the emitter-base leakage current of HBTs has been investigated by the use of an InGaP emitter. InGaP/GaAs n-p-n HBT structures with high C-doped bases, grown by MOCVD, have been fabricated and these devices show Gummel plots with near ideal I-V characteristics (n_c=1.00 and n_b=1.09). Measured current gain remains relatively flat over five decades of collector current and its magnitude is greater than unity at collector current as low as 0.1 mu A. The characteristics of these HBTs were compared with fabricated AlGaAs/GaAs HBTs having similar device structure. The superior performance of the InGaP emitter HBT is demonstrated.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; leakage currents; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 0.1 muA; InGaP emitter; InGaP-GaAs:C; MOCVD; current gain; emitter-base leakage current; high C-doped bases; n-p-n HBT structures; near ideal I-V characteristics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930640

Filename

216344