DocumentCode :
902425
Title :
Geometrical Shaping of InGaN Light-Emitting Diodes by Laser Micromachining
Author :
Fu, W.Y. ; Hui, K.N. ; Wang, X.H. ; Wong, K. K Y ; Lai, P.T. ; Choi, H.W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume :
21
Issue :
15
fYear :
2009
Firstpage :
1078
Lastpage :
1080
Abstract :
Geometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The sapphire substrate is shaped with inclined sidewalls at 50deg, serving as a prism favoring light redirection for out-coupling from the top window. Compared to conventional cuboid LEDs with a calculated light extraction efficiency etaext of 18.3%, these shaped LEDs offers a pronounced increase in etaext of up to 85.2%, verified by experimental results.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser beam machining; light emitting diodes; micromachining; Al2O3; InGaN; geometrical shaping; laser micromachining; light extraction efficiency; light-emitting diode; prism; sapphire substrate; Laser micro-machining; light-emitting diodes (LEDs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2022751
Filename :
4957011
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=902425
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