DocumentCode
902452
Title
High-Power Tapered Unstable-Resonator Laser Diode With a Fiber-Bragg-Grating Reflector
Author
Sakai, Kiyohide ; Itakura, Shigetaka ; Shimada, Naoyuki ; Shibata, Kimitaka ; Hanamaki, Yoshihiko ; Yagi, Tetsuya ; Hirano, Yoshihito
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Volume
21
Issue
16
fYear
2009
Firstpage
1103
Lastpage
1105
Abstract
We designed a tapered unstable-resonator laser diode consisting of a 3-mm-long tapered amplifier and a fiber-Bragg-grating reflector, both of which were coupled with a biconical microlens at the fiber end. The amplifier was composed of an InGaAs single quantum well inside a waveguide, which had an optical confinement factor of 1.2%, a tapered current constriction of 6deg in full angle, and an input width of 10 mum. The grating reflector was fabricated in a polarization-maintaining fiber with a reflectivity of 99% and a reflection bandwidth of 0.19 nm. A biconical microlens with vertical and horizontal radii of 3.5 and 11 mum, respectively, was fabricated at the fiber end to increase the coupling efficiency between the tapered amplifier and the grating reflector. An output power of 3.2 W was obtained at a wavelength of 1064 nm in multimode operation for the grating reflection bandwidth.
Keywords
Bragg gratings; III-V semiconductors; amplifiers; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; InGaAs; coupling efficiency; fiber-Bragg-grating reflector; grating reflector; quantum well; reflectivity; tapered amplifier; unstable-resonator laser diode; wavelength 1064 nm; Gratings; laser amplifiers; laser resonators; semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2022956
Filename
4957015
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