• DocumentCode
    902509
  • Title

    Dry etching of via connections for InP power devices

  • Author

    Constantine, C. ; Barratt, C. ; Pearton, S.J. ; Ren, Fengyuan ; Lothian, J.R. ; Hobson, W.S. ; Katz, Al ; Yang, L.W. ; Chao, P.C.

  • Author_Institution
    Plasma Therm IP, St. Petersburg, FL, USA
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    5/27/1993 12:00:00 AM
  • Firstpage
    984
  • Lastpage
    986
  • Abstract
    Through-wafer vias fabricated in InP substrates using high-rate (>or=1 mu m min-1) dry etching in an electron cyclotron resonance (ECR) Cl2/CH4/H2/Ar discharge at 150 degrees C are reported. The low process pressure ( approximately 2 mtorr) enables creation of small diameter (30 mu m) vias using photoresist masks and the anisotropic profiles are suitable for Au plating to complete the electrical front-to-back connection.
  • Keywords
    III-V semiconductors; MMIC; indium compounds; metallisation; sputter etching; 150 degC; 2 mtorr; 30 micron; Ar; Au plating; Cl 2; Cl 2-H 2-Ar; ECR discharge; H 2; InP substrates; MMIC devices; anisotropic profiles; dry etching; electrical front-to-back connection; low process pressure; methane; photoresist masks; power devices; through wafer vias; via connections;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930655
  • Filename
    216359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902509