DocumentCode :
902509
Title :
Dry etching of via connections for InP power devices
Author :
Constantine, C. ; Barratt, C. ; Pearton, S.J. ; Ren, Fengyuan ; Lothian, J.R. ; Hobson, W.S. ; Katz, Al ; Yang, L.W. ; Chao, P.C.
Author_Institution :
Plasma Therm IP, St. Petersburg, FL, USA
Volume :
29
Issue :
11
fYear :
1993
fDate :
5/27/1993 12:00:00 AM
Firstpage :
984
Lastpage :
986
Abstract :
Through-wafer vias fabricated in InP substrates using high-rate (>or=1 mu m min-1) dry etching in an electron cyclotron resonance (ECR) Cl2/CH4/H2/Ar discharge at 150 degrees C are reported. The low process pressure ( approximately 2 mtorr) enables creation of small diameter (30 mu m) vias using photoresist masks and the anisotropic profiles are suitable for Au plating to complete the electrical front-to-back connection.
Keywords :
III-V semiconductors; MMIC; indium compounds; metallisation; sputter etching; 150 degC; 2 mtorr; 30 micron; Ar; Au plating; Cl 2; Cl 2-H 2-Ar; ECR discharge; H 2; InP substrates; MMIC devices; anisotropic profiles; dry etching; electrical front-to-back connection; low process pressure; methane; photoresist masks; power devices; through wafer vias; via connections;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930655
Filename :
216359
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=902509
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