DocumentCode :
9026
Title :
Nonlinear modelling of dynamic self-heating in 28 nm bulk complementary metal–oxide semiconductor technology
Author :
Sahoo, A.K. ; Fregonese, S. ; Scheer, P. ; Celi, D. ; Juge, A. ; Zimmer, T.
Author_Institution :
Lab. IMS, Univ. de Bordeaux, Brive-la-Gaillarde, France
Volume :
51
Issue :
7
fYear :
2015
fDate :
4 2 2015
Firstpage :
581
Lastpage :
583
Abstract :
A new and simple approach for nonlinear modelling of the dynamic self-heating effect in bulk complementary metal-oxide semiconductor (CMOS) field effect transistors is presented. Low-frequency S-parameter measurements are performed in 28 nm bulk CMOS technology at room temperature between a 10 kHz and 3 GHz frequency range and the thermal impedance (ZTH) of the devices is extracted. The proposed model is validated through the measurements for different bias points. The results obtained demonstrate a reasonable agreement between theoretical prediction and experimental data.
Keywords :
CMOS integrated circuits; field effect MMIC; field effect transistors; integrated circuit modelling; semiconductor device models; CMOS; bias points; bulk complementary metal-oxide semiconductor technology; dynamic self-heating; field effect transistors; frequency 10 kHz to 3 GHz; low-frequency S-parameter measurements; nonlinear modelling; size 28 nm; temperature 293 K to 298 K; thermal impedance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2015.0200
Filename :
7073722
Link To Document :
بازگشت