Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers

Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density J_th on cavity length and temperature has been investigated and a pulsed J_th of 2.15 kAcm^-2 obtained for a 750 mu m long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.