DocumentCode
902694
Title
Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers
Author
Summers, H.D. ; Blood, P.
Author_Institution
Univ. of Wales, Coll. of Cardiff, UK
Volume
29
Issue
11
fYear
1993
fDate
5/27/1993 12:00:00 AM
Firstpage
1007
Lastpage
1008
Abstract
Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density Jth on cavity length and temperature has been investigated and a pulsed Jth of 2.15 kAcm-2 obtained for a 750 mu m long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; 293 K; 619 nm; 750 micron; AlGaInP-GaInP tensile strained quantum well lasers; MOCVD; cavity length; intrinsic threshold current; room temperature; threshold current density; ultrashort wavelength;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930672
Filename
216375
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