Abstract :
SiC backward diodes which operate between 77°K and 1000°K have been developed. Figures of merit (γ√R) of 19 300, 3960, and 15 at 12.5 MHz, 50 MHz and 8.8 GHz, respectively, have been measured with detector area on the order of 10-5cm2. These results are compatible with a prior analysis which predicted an upper frequency limit of between 0.1 and 1.0 GHz for SiC backward diodes.
