• DocumentCode
    902716
  • Title

    High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier

  • Author

    Shono, M. ; Honda, Shogo ; Ikegami, Tomoaki ; Hiroyama, R. ; Kase, K. ; Yodoshi, K. ; Yamaguchi, Toru ; Niina, T.

  • Author_Institution
    Sanyo Electric Co. Ltd., Osaka, Japan
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    5/27/1993 12:00:00 AM
  • Firstpage
    1010
  • Lastpage
    1011
  • Abstract
    High-power tensile strained multiquantum-well AlGaInP laser diodes ( lambda L=636 nm) with a multiquantum barrier have been successfully fabricated by MOCVD using
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor device testing; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 20 mW; 40 mW; 50 degC; 500 h; 636 nm; AlGaInP laser diodes; CW output power; GaAs substrate; MOCVD; high power operation; multiquantum barrier; tensile strained MQW laser diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930674
  • Filename
    216377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902716