Title :
High-power Gunn-effect oscillators using epitaxial GaAs
Author :
King, Grant W. ; Wasse, M.P.
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
fDate :
8/1/1966 12:00:00 AM
Abstract :
The construction of oscillators from thin epitaxial layers of GaAs is described. Tests on several experimental samples have been made, and peak powers of over 14W have been obtained at C band. Curves are presented relating the drive voltage to parameters such as frequency, efficiency and power output for a typical sample.
Keywords :
Gunn effect; oscillators; semiconductor devices; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19660264
