• DocumentCode
    902750
  • Title

    Effective thermal conductivity analysis of 1.55 mu m InGaAsP/InP vertical-cavity top-surface-emitting microlasers

  • Author

    Osinski, M. ; Nakwaski, Wlodzimierz

  • Author_Institution
    New Mexico Univ., Albuquerque, NM, USA
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    5/27/1993 12:00:00 AM
  • Firstpage
    1015
  • Lastpage
    1016
  • Abstract
    An analytical approach is developed and applied to investigate the thermal properties of 1.55 mu m microresonator vertical-cavity surface-emitting lasers (VCSELs) mounted substrate-down. The results indicate that difficulties with obtaining the CW operation of long-wavelength VCSELs are primarily associated with intrinsic properties (such as low T0) rather than with their thermal resistance.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; thermal analysis; thermal conductivity of solids; 1.55 micron; CW operation; InGaAsP-InP; long-wavelength; microresonator; substrate-down mounting; thermal conductivity analysis; thermal properties; thermal resistance; top-surface-emitting microlasers; vertical-cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930677
  • Filename
    216380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902750