Title :
An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications
Author :
Larson, Lawrence E.
fDate :
8/1/1987 12:00:00 AM
Abstract :
An improved equivalent circuit model of a gallium-arsenide (GaAs) MESFET that is optimized for the design and analysis of precision analog integrated circuits is described. These circuits entail different modeling requirements from digital or microwave circuits, for which existing equivalent circuit models are optimized. Improved techniques are presented to model the drain-to-source conductance, device capacitance, and the functional dependence of drain-to-source current.
Keywords :
Equivalent circuits; Field effect integrated circuits; Gallium arsenide; III-V semiconductors; Linear integrated circuits; Schottky gate field effect transistors; Semiconductor device models; equivalent circuits; field effect integrated circuits; gallium arsenide; linear integrated circuits; semiconductor device models; Analog integrated circuits; Capacitance; Electron mobility; Equivalent circuits; Gallium arsenide; Integrated circuit modeling; Integrated circuit technology; MESFET integrated circuits; Microwave circuits; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052774
