• DocumentCode
    902986
  • Title

    Very low-frequency measurements of flicker noise in silicon planar transistors

  • Author

    Martin, J.C. ; Mateu-Perez, F.X. ; Serra-Mestres, F.

  • Author_Institution
    Laboratoire de Génie Ã\x89lectrique, Toulouse, France
  • Volume
    2
  • Issue
    9
  • fYear
    1966
  • fDate
    9/1/1966 12:00:00 AM
  • Firstpage
    343
  • Lastpage
    345
  • Abstract
    The noise-power spectrum from 0.01 to 10¿4 Hz is measured using a progressive bandwidth-measuring method. The 1/f law is verified, and it is found that flicker noise may be represented in the common-emitter configuration by an input current generator iB given in terms of current collector Ie and current gain ß by iB2¿ = C¿f/f Ie3/2/ß2
  • Keywords
    noise measurement; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19660290
  • Filename
    4233223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902986