Title :
An analytical model for electron transport and luminance in SrS:Cu,Ag ACTFEL display devices
Author :
Singh, Vijay P. ; Sivakumar, Praveen ; Aguilera, Alberto ; Morton, David C. ; Forsythe, Eric
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Kentucky, Lexington, KY, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
An analytical model is developed to explain electron transport and luminance mechanisms in SrS:Cu,Ag ac thin film electroluminescent (ACTFEL) display devices. The model includes shallow and deep interface states, bulk traps, and impact excitation and ionization of activators. Mathematical expressions describing optoelectronic processes in the phosphor layer and interface states are written and numerical solutions for field, current and luminance are obtained. Results of calculations are compared with experimental data. The model is able to simulate the dominant features of the experimental luminance and current waveforms.
Keywords :
copper; electroluminescence; electroluminescent devices; electron mobility; flat panel displays; impact ionisation; interface states; semiconductor junctions; silver; strontium compounds; thin film circuits; ACTFEL display devices; SrS:Cu,Ag; ac thin film electroluminescent display devices; activator ionization; bulk traps; current waveforms; deep interface states; electroluminescence; electron luminance; electron transport; flat panel displays; impact excitation; optoelectronic processes; phosphor layer; shallow interface states; thin film devices; Analytical models; Electroluminescent devices; Electron traps; Flat panel displays; Insulation; Interface states; Ionization; Luminescence; Phosphors; Thin film devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.822596
