Title :
Fabrication and characterization of polymeric p-channel junction FETs
Author :
Cui, Tianhong ; Liu, Yuxin ; Varahramyan, Kody
Author_Institution :
Dept. of Mech. Eng., Univ. of Minnesota, Minneapolis, MN, USA
fDate :
3/1/2004 12:00:00 AM
Abstract :
Polymer materials are attracting more and more attention for the applications to microelectronic/optoelectronic devices due to their flexibility, lightweight, low cost, etc. In this paper, fabrication and characterization of a polymer junction field-effect transistor (JFET), using poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDT/PSS) as the channel and poly (2,5-hexyloxy p-phenylene cyanovinylene) (CNPPV) as the gate layer, are reported. The all-polymer JFET was fabricated by the conventional ultraviolet (UV) lithography techniques. The fabricated device was measured and characterized electrically. In the meantime, the comparisons were listed between polymer JFET and analogous inorganic semiconductor counterparts. Its pinch-off voltage reaches 1 V that is in the applicable range, and the current is -13.8 μA at zero gate bias. It demonstrates that the device operates in a very similar fashion to its conventional counterparts.
Keywords :
ion beam lithography; junction gate field effect transistors; p-n junctions; all-polymer JFET; analogous inorganic semiconductor counterparts; field-effect transistor; gate layer; microelectronic device; microfabrication; optoelectronic device; pinch-off voltage; poly (2,5-hexyloxy p-phenylene cyanovinylene); poly (3,4-ethylenedioxythio-phene)-poly (styrenesulfonate); polymer materials; polymer microelectronics; polymeric p-channel junction FETs; ultraviolet lithography; zero gate bias; Costs; Electric variables measurement; FETs; JFETs; Lithography; Microelectronics; Optical device fabrication; Optoelectronic devices; Polymers; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.822278
