The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers

Author

Shi, Jin-Wei ; Guol, Shi-Hao ; Lin, C.-S. ; Sheu, Jinn-Kong ; Chang, Kuo-Hua ; Lai, W.C. ; Kuo, C.H. ; Tun, C.J. ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

Volume

15

Issue

4

fYear

2009

Firstpage

1292

Lastpage

1297

Abstract

In this study, we demonstrate a GaN-based transverse junction blue LED array. This device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped multiple quantum wells (MQWs). Due to the transverse flow of injection carriers, problems related to nonuniform current distribution, nonuniform carrier distribution among different MQWs, and bias-dependent shape of the electroluminescence spectra such as that occurring in traditional GaN-based blue LEDs with vertical p-n junctions and large active area (>1 mm²) are all greatly minimized in our structure.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; light emitting diodes; semiconductor growth; semiconductor junctions; semiconductor quantum wells; wide band gap semiconductors; GaN; LED structure; electroluminescence spectra; injected current; n-type semiconductor layer regrowth; nonuniform carrier distribution; nonuniform current distribution; transverse flow; transverse junction blue LED array; undoped multiple quantum wells; GaN LEDs; white light generation;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2009.2017029

Filename

4957079