Title :
Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs
Author :
Tedesco, Carlo ; Zanoni, Enrico ; Canali, Claudio ; Bigliardi, Stefano ; Manfredi, Manfredo ; Streit, Dwight C. ; Anderson, Wallace T.
Author_Institution :
Dipartimento di Elettronica ed Inf., Padova Univ., Italy
fDate :
7/1/1993 12:00:00 AM
Abstract :
Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMTs characterized by δ doping in the undoped AlGaAs layer and by additional planar doping within the InGaAs channel, and suitable for high-power applications. Impact ionization has been demonstrated to the limiting effect for high Vds applications. Emission spectra in the 1.1-2.6 eV range have been analyzed. They show peaks at low energy due to recombination mechanisms and a long tail due to hot electrons
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; electron-hole recombination; gallium arsenide; high electron mobility transistors; hot carriers; impact ionisation; power transistors; 1.1 to 2.6 eV; AlGaAs-InGaAs; delta doping; high power pseudomorphic HEMT; hot electrons; impact ionization; light emission; planar doping; recombination mechanisms; Doping; Electric breakdown; Electron mobility; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Irrigation; MODFETs; Power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
