Characterization and modeling of SOI varactors at various temperatures

Author

Chen, Kun-Ming ; Huang, Guo-Wei ; Wang, Sheng-Chun ; Yeh, Wen-Kuan ; Fang, Yean-Kuen ; Yang, Fu-Liang

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

51

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

427

Lastpage

433

Abstract

Capacitance and quality factor of accumulation-mode and inversion-mode MOS varactors in silicon-on-insulator CMOS process were measured over a temperature range of 0°C≤T≤150°C. The temperature coefficient of capacitance of inversion-mode devices is larger than that of accumulation-mode devices in the normal operating range, because the threshold voltage is sensitive to temperature. Besides, the quality factor decreases with increasing temperature for these two types of varactors due to the increase of parasitic resistance. A device model based on BSIM3v3 model is proposed to simulate the temperature effect. The modeling results of capacitance, series resistance and quality factor for SOI varactors have excellent agreement with measured results.

Keywords

Q-factor; accumulation layers; capacitance; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; varactors; SOI varactors; Si-SiO₂; accumulation-mode MOS varactors; and inversion-mode MOS varactors; capacitance; parasitic resistance; quality factor; silicon-on-insulator CMOS process; threshold voltage; CMOS process; Capacitance measurement; Parasitic capacitance; Q factor; Semiconductor device modeling; Silicon on insulator technology; Temperature distribution; Temperature measurement; Temperature sensors; Varactors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.822585

Filename

1268269