Title :
A GaAs 16 K SRAM with a single 1-V supply
Author :
Takano, Satoshi ; Makino, Hiroshi ; Tanino, Noriyuki ; Noda, Minoru ; Nishitani, Kazuo ; Kayano, Shimpei
fDate :
10/1/1987 12:00:00 AM
Abstract :
A GaAs 4 K×4-b static random access memory (SRAM) with 11-ns access time and 1-W power dissipation is described. The device is fabricated using 1.0-μm WSi/SUB x/ selfaligned gate metal semiconductor FET (MESFET) and double-level interconnection technology. Optimization of fan-out and adoption of an address precoder circuit enable both fast access time and low power dissipation. The SRAM operates with a single 1.0-V supply.
Keywords :
Field effect integrated circuits; Gallium arsenide; III-V semiconductors; Integrated memory circuits; Random-access storage; field effect integrated circuits; gallium arsenide; integrated memory circuits; random-access storage; Circuits; FETs; Gallium arsenide; Inverters; Large scale integration; Power dissipation; Propagation delay; Random access memory; Read-write memory; SRAM chips;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1987.1052802
