• DocumentCode
    903228
  • Title

    Steady-state modeling of resistive-gate MOSFETs

  • Author

    Fu, Hua ; Cooper, James A., Jr.

  • Author_Institution
    Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    40
  • Issue
    7
  • fYear
    1993
  • fDate
    7/1/1993 12:00:00 AM
  • Firstpage
    1263
  • Lastpage
    1269
  • Abstract
    The Pao-Sah model for the long-channel MOSFET is generalized to include MOSFETs with resistive-gate electrodes (RG-MOSFETs). The RG-MOdSFETs current-voltage characteristics are studied using this extended Pao-Sah model. The steady-state operation of the RG-MOSFET can be divided into three regimes, separated by the uniform channel condition and the pinch-off condition, respectively. The regions of operation are discussed, and a simple analytical I-V expression is given for the device
  • Keywords
    insulated gate field effect transistors; semiconductor device models; Pao-Sah model; current-voltage characteristics; pinch-off condition; resistive gate MOSFET; steady-state operation; uniform channel condition; Current-voltage characteristics; Electron mobility; FETs; Gallium arsenide; Helium; MOSFETs; Steady-state; Transient analysis; Velocity measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.216431
  • Filename
    216431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=903228