NMOS device characteristics in electron-beam-recrystallized SOI

Author

Thompson, Lance R. ; Buser, James R. ; Meyer, Jack D. ; Moore, Cameron A. ; Fukumoto, Jay T. ; Collins, George J.

Author_Institution

Storage Technol. Corp., Louisville, CO, USA

Volume

40

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1270

Lastpage

1276

Abstract

Characteristics of n-channel MOSFETs fabricated in cold-cathode electron-beam-recrystallized silicon-on-oxide layers have been examined. Assorted crystallographic defects exist in the recrystallized silicon layer, ranging from highly branched subgrain boundaries to widely spaced parallel subgrains and rows of threading dislocations. Some of these MOSFET transistors have characteristics approaching those fabricated in bulk silicon including ≈828 cm²/V-s electron surface mobilities and 130 mV/decade inverse subthreshold slopes. However, many of the devices tested exhibited leakage currents up to 10^-6 A/μm, resulting in high inverse subthreshold slopes and reduced threshold voltages. Some effects of crystal imperfections on device behavior are discussed

Keywords

carrier mobility; dislocations; electron beam applications; grain boundaries; insulated gate field effect transistors; leakage currents; recrystallisation annealing; semiconductor-insulator boundaries; SOI NMOS device; crystal imperfections; crystallographic defects; electron beam recrystallisation; electron surface mobilities; highly branched subgrain boundaries; inverse subthreshold slopes; leakage currents; n-channel MOSFETs; threading dislocations; threshold voltages; widely spaced parallel subgrains; Cathodes; Crystalline materials; Crystallography; Electron beams; Leakage current; MOS devices; MOSFET circuits; Optical films; Optical waveguides; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.216432

Filename

216432