Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection. Part I. Model derivation

Author

Bonani, Fabrizio ; Guerrieri, Simona Donati ; Ghione, Giovanni

Volume

51

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

467

Lastpage

476

Abstract

Starting from the well known low-injection approximation, a closed form, analytical compact model is derived for the small-signal (SS) and forced quasi-periodic operation of junction diodes. The model determines the small-signal and conversion admittance matrix of the device as a function of the applied (dc or periodic-time varying) bias. Noise characteristics, in both the stationary (SS) and cyclostationary cases, are also evaluated by means of a Green´s function approach.

Keywords

junction gate field effect transistors; p-n junctions; Greens function; admittance matrix; analytical compact model; closed form model; cyclostationary noise modeling; dc bias; forced quasi-periodic operation; frequency conversion; junction diodes; low-injection approximation; noise characteristics; pn-junction diodes; semiconductor device modeling; semiconductor device noise; small-signal conversion; small-signal determination; small-signal quasi-periodic operation; Analytical models; Circuit noise; Circuit synthesis; Computational modeling; Equations; Frequency conversion; Radio frequency; Semiconductor device noise; Semiconductor diodes; Semiconductor process modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.821570

Filename

1268275