A 34-ns 1-Mbit CMOS SRAM using triple polysilicon

A 128-kb word×8-b CMOS SRAM with an access time of 3 ns and a standby current of 2 μA is described. This RAM has been fabricated using triple-polysilicon and single-aluminum CMOS technology with 0.8-μm minimum design features. A high-resistive third polysilicon load has been developed to realize a low standby current. In order to obtain a faster access time, a 16-block architecture and a data-output presetting technique combined with address transition detection (ATD) are used. This RAM has a flash-clear function in which logical zeros are written into all memory cells in less than 1 μs.