Title :
Ultralow silicon substrate noise crosstalk using metal Faraday cages in an SOI technology
Author :
Stefanou, S. ; Hamel, John S. ; Baine, P. ; Bain, M. ; Armstrong, B.M. ; Gamble, H.S. ; Kraft, M. ; Kemhadjian, H.A.
Author_Institution :
Dept. of Electron. & Comput. Sci., Univ. of Southampton, Southhampton, UK
fDate :
3/1/2004 12:00:00 AM
Abstract :
Ultralow substrate crosstalk is demonstrated using a novel metal Faraday cage isolation scheme in silicon-on-insulator technology. Over ten times reduction in crosstalk is demonstrated up to 10 GHz, compared to previously reported substrate crosstalk suppression technologies.
Keywords :
crosstalk; semiconductor device noise; silicon-on-insulator; SOI technology; integrated circuit noise; metal Faraday cage isolation scheme; metal Faraday cages; microwave devices; s-parameters; silicon-on-insulator; substrate crosstalk suppression; ultralow silicon substrate noise; CMOS technology; Circuit noise; Crosstalk; Inductors; Integrated circuit noise; Integrated circuit technology; Isolation technology; Radio frequency; Silicon on insulator technology; System-on-a-chip;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.822348
