Controlling the characteristics of the MPS rectifier by variation of area of Schottky region

Author

Tu, Shang-hui L. ; Baliga, B.Jayant

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

40

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1307

Lastpage

1315

Abstract

A method of controlling the characteristics of the merged p-i-n Schottky (MPS) rectifier is demonstrated both theoretically and experimentally. It is based on varying the relative area of the p⁺-n junction and Schottky regions in the device. A curve for the tradeoff between the forward voltage drop and the switching characteristics can be obtained using this method, while maintaining a constant minority-carrier lifetime. It is shown that this curve is superior to that obtained for the p-i-n rectifier using lifetime control techniques. This method of performing the tradeoff has the advantage that it can be done at the design stage, avoiding the problems and additional processing associated with lifetime control. It is also demonstrated that the superior characteristics of the MPS rectifier is retained even when a thick high-resistivity epilayer is used for high blocking voltages up to 900 V

Keywords

Schottky-barrier diodes; carrier lifetime; p-i-n diodes; solid-state rectifiers; 900 V; MPS rectifier; Schottky region; blocking voltages; constant minority-carrier lifetime; forward voltage drop; high-resistivity epilayer; merged p-i-n Schottky; relative area; switching characteristics; Breakdown voltage; Insulated gate bipolar transistors; MOSFET circuits; P-i-n diodes; PIN photodiodes; Power MOSFET; Power systems; Rectifiers; Schottky barriers; Switching circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.216437

Filename

216437