DocumentCode
903360
Title
100 Watt Super Audio Amplifier Using New Mos Devices
Author
Sampei, Tohru ; Ohashi, Shin-ichi ; Ochi, Shikayuki
Author_Institution
Consumer Products Research Center
Issue
3
fYear
1977
Firstpage
409
Lastpage
417
Abstract
A 100 watt audio amplifier was recently developed using a new Power MOSFET which was developed by our MOS Device Group. The Power MOSFET has several advantages over bipolar transistors. It has good frequency response, no carrier storage delay, thermal stability, no secondary breakdown and high input impedance.
Keywords
Bipolar transistors; Delay; Electric breakdown; Frequency response; Impedance; MOS devices; MOSFET circuits; Power MOSFET; Power amplifiers; Thermal stability;
fLanguage
English
Journal_Title
Consumer Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0098-3063
Type
jour
DOI
10.1109/TCE.1977.266916
Filename
4042983
Link To Document