• DocumentCode
    903390
  • Title

    Three-dimensional finite-element investigation of current crowding and peak temperatures in VLSI multilevel interconnections

  • Author

    Trattles, J.T. ; O´Neill, A.G. ; Mecrow, B.C.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Newcastle-upon-Tyne Univ., UK
  • Volume
    40
  • Issue
    7
  • fYear
    1993
  • fDate
    7/1/1993 12:00:00 AM
  • Firstpage
    1344
  • Lastpage
    1347
  • Abstract
    Multilevel interconnection vias are investigated using a coupled thermal and electrical conduction model in three dimensions and the finite-element method. The concept of using a volume to quantify current crowding is introduced. Close to a contact via it is found that the peak temperature moves between the upper track and the via as a function of geometry
  • Keywords
    VLSI; finite element analysis; metallisation; VLSI multilevel interconnections; coupled thermal/electrical conduction model; current crowding; finite-element method; geometry; interconnection vias; peak temperatures; Current density; Equations; Finite element methods; Geometry; Heating; Integrated circuit interconnections; Proximity effect; Temperature dependence; Thermal conductivity; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.216444
  • Filename
    216444