Title :
Effects of high field generation of charge trapping in the oxide and interface traps on MOS capacitors and MOSFETs
Author_Institution :
Harris Semicond. Sector, Melbourne, FL, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
Oxide charge trapping and interface state generation phenomena under the various high-field stress conditions have been investigated using capacitors fabricated on both p-and n-type substrates, and p- and n-channel MOSFETs. It was found that prediction based on MOSFET devices yielded shorter lifetimes than predictions based on capacitors
Keywords :
electron traps; insulated gate field effect transistors; interface electron states; MOS capacitors; MOSFETs; charge trapping; high-field stress conditions; interface traps; lifetimes; oxide charge trapping; Capacitance-voltage characteristics; Degradation; Dielectric breakdown; Interface states; MOS capacitors; MOSFET circuits; Monitoring; Stress; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
