DocumentCode
903404
Title
Effects of high field generation of charge trapping in the oxide and interface traps on MOS capacitors and MOSFETs
Author
Ito, Akira
Author_Institution
Harris Semicond. Sector, Melbourne, FL, USA
Volume
40
Issue
7
fYear
1993
fDate
7/1/1993 12:00:00 AM
Firstpage
1347
Lastpage
1350
Abstract
Oxide charge trapping and interface state generation phenomena under the various high-field stress conditions have been investigated using capacitors fabricated on both p-and n-type substrates, and p- and n-channel MOSFETs. It was found that prediction based on MOSFET devices yielded shorter lifetimes than predictions based on capacitors
Keywords
electron traps; insulated gate field effect transistors; interface electron states; MOS capacitors; MOSFETs; charge trapping; high-field stress conditions; interface traps; lifetimes; oxide charge trapping; Capacitance-voltage characteristics; Degradation; Dielectric breakdown; Interface states; MOS capacitors; MOSFET circuits; Monitoring; Stress; Subthreshold current; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.216445
Filename
216445
Link To Document