Title :
Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors
Author :
Liu, William ; Fan, Shou-Kong ; Henderson, Timothy ; Davito, Dave
Author_Institution :
Texas Instruments, Dallas, TX, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
The temperature dependences of current gain are investigated for both GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Measured results indicate that for GaInP/GaAs HBTs the current gain at collector current densities >0.1 A/cm2 remains nearly constant, independent of the substrate temperature for AlGaAs/GaAs HBTs. These current gain characteristics are examined, and the origin of the difference is attributed to the difference of the valence-band discontinuities in the base-emitter heterojunctions of the two HBTs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; AlGaAs-GaAs; GaInP-GaAs; III-V semiconductors; base-emitter heterojunctions; collector current densities; current gain; heterojunction bipolar transistors; substrate temperature; valence-band discontinuities; Composite materials; Current density; Current measurement; Data mining; Doping; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Substrates; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
