Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors

Author

Liu, William ; Fan, Shou-Kong ; Henderson, Timothy ; Davito, Dave

Author_Institution

Texas Instruments, Dallas, TX, USA

Volume

40

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1351

Lastpage

1353

Abstract

The temperature dependences of current gain are investigated for both GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Measured results indicate that for GaInP/GaAs HBTs the current gain at collector current densities >0.1 A/cm² remains nearly constant, independent of the substrate temperature for AlGaAs/GaAs HBTs. These current gain characteristics are examined, and the origin of the difference is attributed to the difference of the valence-band discontinuities in the base-emitter heterojunctions of the two HBTs

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; AlGaAs-GaAs; GaInP-GaAs; III-V semiconductors; base-emitter heterojunctions; collector current densities; current gain; heterojunction bipolar transistors; substrate temperature; valence-band discontinuities; Composite materials; Current density; Current measurement; Data mining; Doping; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Substrates; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.216446

Filename

216446