Title :
Designing FET´s for broad noise circles
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
fDate :
2/1/1993 12:00:00 AM
Abstract :
It is shown that the keys to broader noise circles are a lower minimum noise figure and a small optimum generator reflector coefficient. An optimum FET width for the smallest generator reflection coefficient and the broadest noise circles has been demonstrated with 0.25 μm MODFETs. A FET of optimum width also has the lowest noise figure with a 50 Ω generator. An expression is derived showing that the optimum gate width is inversely proportional to frequency, and that the optimum width should be a weak function of gate length for FETs optimally scaled for gate length
Keywords :
equivalent circuits; field effect transistors; high electron mobility transistors; semiconductor device models; semiconductor device noise; 0.25 micron; MODFETs; broad noise circles; frequency; gate length; minimum noise figure; optimum FET width; optimum generator reflector coefficient; Acoustic reflection; Circuit noise; FETs; Frequency; Impedance; Low-noise amplifiers; Manufacturing; Noise figure; Noise generators; Temperature dependence;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
