GaAs switched-capacitor circuits for high-speed signal processing

Author

Larson, Lawrence E. ; Martin, Kenneth W. ; Temes, Gabor C.

Volume

22

Issue

6

fYear

1987

fDate

12/1/1987 12:00:00 AM

Firstpage

971

Lastpage

981

Abstract

Switched-capacitor building blocks are presented which are suitable for implementation in GaAs MESFET technology. They include gain stages, operational amplifiers, and transmission gates. Switched-capacitor design techniques are discussed that minimize filter sensitivity to GaAs op-amp limitations. Experimental results are presented on a variety of GaAs switched-capacitor circuits, including a gain stage, a second-order bandpass filter, and a third-order low-pass filter. The circuits demonstrate sampling rates exceeding 100 MHz without significant loss of accuracy.

Keywords

Band-pass filters; Differential amplifiers; Field effect integrated circuits; Gallium arsenide; III-V semiconductors; Integrating circuits; Low-pass filters; Operational amplifiers; Schottky gate field effect transistors; Signal processing equipment; Switched capacitor filters; Switched capacitor networks; band-pass filters; differential amplifiers; field effect integrated circuits; gallium arsenide; integrating circuits; low-pass filters; operational amplifiers; signal processing equipment; switched capacitor filters; switched capacitor networks; Band pass filters; Gallium arsenide; Integrated circuit technology; MESFETs; MOS devices; Operational amplifiers; Signal processing; Signal sampling; Silicon; Switched capacitor circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1987.1052845

Filename

1052845