Title :
Proposed Gunn-effect switch
Author :
Engelmann, R.W.H. ; Heinle, W.
Author_Institution :
AEG-Telefunken, Forschungsinstitut, Ulm, West Germany
Abstract :
The possibility of using a Gunn device as a switch similar to a tunnel diode is investigated theoretically. Three switching types are obtained, one of which leads to the homogeneous high-field state with predicted switching times of a few |RN|C (corresponding to the homogeneous sample).
Keywords :
Gunn effect; semiconductor devices; semiconductor switches;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680147
