• DocumentCode
    903790
  • Title

    Proposed Gunn-effect switch

  • Author

    Engelmann, R.W.H. ; Heinle, W.

  • Author_Institution
    AEG-Telefunken, Forschungsinstitut, Ulm, West Germany
  • Volume
    4
  • Issue
    10
  • fYear
    1968
  • Firstpage
    190
  • Lastpage
    192
  • Abstract
    The possibility of using a Gunn device as a switch similar to a tunnel diode is investigated theoretically. Three switching types are obtained, one of which leads to the homogeneous high-field state with predicted switching times of a few |RN|C (corresponding to the homogeneous sample).
  • Keywords
    Gunn effect; semiconductor devices; semiconductor switches;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680147
  • Filename
    4233390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=903790