Title :
Transient selection gates using breakdown
fDate :
10/1/1972 12:00:00 AM
Abstract :
A new class of gates suitable for selection in memories is presented. The gate utilizes charge storage and avalanche breakdown to obtain a low power dissipation (~6×10/SUP -12/ J/selection, or ~60 μW/gate in a 10-MHz-repetition selection rate), more than an order of magnitude below that of conventional TTL gates. Only narrow (≳ 1 ns), nonoverlapping pulses are needed and external dc voltages are not required. A totally transient mode of operation is described that requires no resistors. Also described are the results of analog simulations using discrete components.
Keywords :
Electric breakdown; Logic circuits; Semiconductor storage devices; Simulation; Transients; electric breakdown; logic circuits; semiconductor storage devices; simulation; transients; Avalanche breakdown; Capacitance; Circuits; Electric breakdown; P-n junctions; Power dissipation; Proposals; Resistors; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1052887
