Title :
A surface-charge random-access memory system
Author :
Engeler, William E. ; Tiemann, Jerome J. ; Baertsch, Richard D.
Abstract :
The authors present a surface-charge storage cell suitable for word-organized dynamic random-access memory and discuss its operation in a memory system. Experimental results and computer simulations of the readout process on a 4/spl times/8 array using this cell are given. A sensitive stable sense-and-refresh amplifier, suitable for use with this memory cell is also described. Simulations of a 4096-bit chip with a storage cell density of 2.5 mils/SUP 2//bit using this refresh amplifier predict a cycle time of 250 ns.
Keywords :
Amplifiers; Random-access storage; Semiconductor storage devices; Semiconductor storage systems; amplifiers; random-access storage; semiconductor storage devices; semiconductor storage systems; Charge transfer; Computational modeling; Computer simulation; Electrodes; Predictive models; Random access memory; Read-write memory; Shift registers; Signal processing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1972.1052888
