DocumentCode :
904300
Title :
Highest Efficiency and Super Quality Audio Amplifier using MOS Power FETS in Class G Operation
Author :
Sampei, Tohru ; Ohashi, Shinichi ; Ohta, Yoshihiro ; Inoue, Shigei
Author_Institution :
Consumer Products Research Center, Hitachi Ltd.
Issue :
3
fYear :
1978
Firstpage :
300
Lastpage :
307
Abstract :
A Class "G" audio power amplifier has achieved a rated continuous output power of 200 watts and peak power of 400 watts. This power amplifier produced no more than 0.01 per cent total harmonic distortion at 20 kHz and 200 watts by using Power MOS FETs in its output stage.
Keywords :
Circuits; Distributed amplifiers; Dynamic range; FETs; High power amplifiers; Operational amplifiers; Power amplifiers; Power generation; Radiofrequency amplifiers; Voltage;
fLanguage :
English
Journal_Title :
Consumer Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0098-3063
Type :
jour
DOI :
10.1109/TCE.1978.267034
Filename :
4043084
Link To Document :
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